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 BAS40SL — Schottky Barrier Diodes ? 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS40SL Rev. A2 2 Typical Performance Characteristics Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current Figure 3. Junction Capacitance Figure 4. Power Derating 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ=150 oC TJ=85 oC TJ=25 oC Forward Voltage Drop, VF[V] Forward Current, I F [mA] 10 20 30 40 1 10 100 1000 10000 100000 TJ=150 oC TJ=25 oC Reverse Current, I R [nA] Reverse Voltage, VR[V] TJ=85 oC 0246810 1 2 3 4 5 f=1mhz Juntion Capacitance, C J [pF] Reverse Voltage, VR[V] 0 25 50 75 100 125 150 0 50 100 150 200 250 300 Power Dissipation, [mW] Ambient Temperature, Ta[oC] |